The global magneto resistive RAM (MRAM) market is expected to
reach USD 4.80 billion by 2025, according to a new study by Grand View
Research, Inc. Non-volatile memories, such as MRAM and Resistive random Access
Memory (RRAM/ReRAM), are expected to replace the existing volatile memories
such as Dynamic Random Access Memory (DRAM) and Static Random-Access Memory
(static RAM or SRAM). The replacement would be possible due to different
benefits offered by the advance non-volatile memories. The existing flash
memories are facing technological limits; and their further advancements are
expected to increase their costs, thus, leading to the invention of
non-volatile memories that are capable of avoiding data loss on power
discharge.
The standalone markets, such as wearables,
embedded Multipoint Control Unit (MCU)s, smart cards, and storage class
memories for enterprise storage, are expected to offer immense opportunities to
the market.
The first generation MRAM and second
generation Spin-Transfer Torque MRAM (STT-MRAM) are expected to replace
traditional DRAMs and SRAMs. Initially, the prices associated with these
memories are expected to be high, which would reduce with the increasing rates
of developments.
Moreover, the increasing demand of these
memories is predicted to promote the demand for equipment, used in their
manufacturing. The manufacturing of these memories require specialized
fabrication equipment, similar to those used in magnetic read sensors. Thus,
promoting the growth of capital equipment required for manufacturing of
non-volatile memories equipment.
The market may face challenges due to its complex
structure and high costs of manufacturing of memories. However, these
challenges can be circumvented by technological advancements and increased
production.
Browse full research report on Magneto
Resistive RAM Market: https://www.grandviewresearch.com/industry-analysis/magneto-resistive-ram-random-access-memory-mram-market
Further key
findings from the study suggest:
- The North American region dominated the
market, accounting for more than 36% of the total market revenue, owing to
the presence of leading players and growing R&D activities
- STT-MRAM is expected to maintain market
dominance due to its wide application, higher performance, thermal
stability, and greater compatibility
- The Asia Pacific region is predicted to emerge
as the fastest-growing market due to the increased penetration of cloud
computing and improvements in the present infrastructures of data centers,
in developing nations
- Strategic partnerships accompanied, by the
increasing innovation and research & development activities, are being
observed in the industry
- The prominent vendors operating in the market
include Avalanche Technology, Inc., Everspin Technologies, Inc., Spin
Transfer Technologies, Toshiba Corporation, and Crocus Nano Electronics
LLC
Browse request sample of this report by
Grand View Research: https://www.grandviewresearch.com/industry-analysis/magneto-resistive-ram-random-access-memory-mram-market/request/rs1
Grand
View Research has segmented the global Magneto Resistive RAM (MRAM) market
based on type, application, and region:
MRAM Type
Outlook (Revenue, USD Million; 2014- 2025)
- Toggle MRAM
- Spin-Transfer Torque
MRAM (STT-MRAM)
MRAM
Application Outlook (Revenue, USD Million; 2014 - 2025)
- Consumer Electronics
- Robotics
- Automotive
- Enterprise Storage
- Aerospace &
Defense
- Others
MRAM Regional
Outlook (Revenue, USD Million; 2014 - 2025)
- North America
- Europe
- Russia
- Asia Pacific
- RoW
About Grand View Research
Grand View Research, Inc. is a U.S. based market
research and consulting company, registered in the State of California and
headquartered in San Francisco. The company provides syndicated research
reports, customized research reports, and consulting services. To help clients
make informed business decisions, we offer market intelligence studies ensuring
relevant and fact-based research across a range of industries, from technology
to chemicals, materials and healthcare.
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